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SIHF30N60E-GE3


Part Number SIHF30N60E-GE3
Zouser Part # SIHF30N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 29A TO220
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHF30N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,657 - More on Order
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SIHF30N60E-GE3 Specifications

Part Number SIHF30N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package -
Package / Case TO-220-3 Full Pack

SIHF30N60E-GE3 Documents

SIHF30N60E-GE3, SIHF30N60E-GE3 Datasheet (Total Pages: 8, Size: 163.93 KB)
SIHF30N60E-GE3 Datasheet CoverSIHF30N60E-GE3 Datasheet Page 2SIHF30N60E-GE3 Datasheet Page 3SIHF30N60E-GE3 Datasheet Page 4SIHF30N60E-GE3 Datasheet Page 5SIHF30N60E-GE3 Datasheet Page 6SIHF30N60E-GE3 Datasheet Page 7SIHF30N60E-GE3 Datasheet Page 8

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