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SIHD7N60E-GE3


Part Number SIHD7N60E-GE3
Zouser Part # SIHD7N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 7A TO-252
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHD7N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock2,416 - More on Order
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SIHD7N60E-GE3 Specifications

Part Number SIHD7N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD7N60E-GE3 Documents

SIHD7N60E-GE3, SIHD7N60E-GE3 Datasheet (Total Pages: 10, Size: 218.21 KB)
SIHD7N60E-E3 Datasheet CoverSIHD7N60E-E3 Datasheet Page 2SIHD7N60E-E3 Datasheet Page 3SIHD7N60E-E3 Datasheet Page 4SIHD7N60E-E3 Datasheet Page 5SIHD7N60E-E3 Datasheet Page 6SIHD7N60E-E3 Datasheet Page 7SIHD7N60E-E3 Datasheet Page 8SIHD7N60E-E3 Datasheet Page 9SIHD7N60E-E3 Datasheet Page 10

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