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SIA850DJ-T1-GE3


Part Number SIA850DJ-T1-GE3
Zouser Part # SIA850DJ-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 190V 0.95A SC70-6
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SIA850DJ-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock159 - More on Order
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SIA850DJ-T1-GE3 Specifications

Part Number SIA850DJ-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series LITTLE FOOT®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190V
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 100V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
Package / Case PowerPAK® SC-70-6 Dual

SIA850DJ-T1-GE3 Documents

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