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SIA426DJ-T1-GE3


Part Number SIA426DJ-T1-GE3
Zouser Part # SIA426DJ-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 4.5A SC70-6
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SIA426DJ-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock189 - More on Order
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SIA426DJ-T1-GE3 Specifications

Part Number SIA426DJ-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 23.6mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 10V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

SIA426DJ-T1-GE3 Documents

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