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SI9926BDY-T1-GE3


Part Number SI9926BDY-T1-GE3
Zouser Part # SI9926BDY-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 6.2A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI9926BDY-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SI9926BDY-T1-GE3 Specifications

Part Number SI9926BDY-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.2A
Rds On (Max) @ Id, Vgs 20mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.14W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

SI9926BDY-T1-GE3 Documents

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