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SI8487DB-T1-E1


Part Number SI8487DB-T1-E1
Zouser Part # SI8487DB-T1-E1
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 30V MICROFOOT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI8487DB-T1-E1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock533 - More on Order
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SI8487DB-T1-E1 Specifications

Part Number SI8487DB-T1-E1
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-UFBGA

SI8487DB-T1-E1 Documents

SI8487DB-T1-E1, SI8487DB-T1-E1 Datasheet (Total Pages: 11, Size: 247.12 KB)
SI8487DB-T1-E1 Datasheet CoverSI8487DB-T1-E1 Datasheet Page 2SI8487DB-T1-E1 Datasheet Page 3SI8487DB-T1-E1 Datasheet Page 4SI8487DB-T1-E1 Datasheet Page 5SI8487DB-T1-E1 Datasheet Page 6SI8487DB-T1-E1 Datasheet Page 7SI8487DB-T1-E1 Datasheet Page 8SI8487DB-T1-E1 Datasheet Page 9SI8487DB-T1-E1 Datasheet Page 10SI8487DB-T1-E1 Datasheet Page 11

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