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RS1E200BNTB


Part Number RS1E200BNTB
Zouser Part # RS1E200BNTB
Manufacturer Rohm Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 20A 8HSOP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RS1E200BNTB PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock330 - More on Order
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RS1E200BNTB Specifications

Part Number RS1E200BNTB
Brand Rohm Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
FET Feature -
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN

RS1E200BNTB Documents

RS1E200BNTB, RS1E200BNTB Datasheet (Total Pages: 13, Size: 2,654.91 KB)
RS1E200BNTB Datasheet CoverRS1E200BNTB Datasheet Page 2RS1E200BNTB Datasheet Page 3RS1E200BNTB Datasheet Page 4RS1E200BNTB Datasheet Page 5RS1E200BNTB Datasheet Page 6RS1E200BNTB Datasheet Page 7RS1E200BNTB Datasheet Page 8RS1E200BNTB Datasheet Page 9RS1E200BNTB Datasheet Page 10RS1E200BNTB Datasheet Page 11RS1E200BNTB Datasheet Page 12RS1E200BNTB Datasheet Page 13

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