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PDTB113ZS,126
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PDTB113ZS,126


Part Number PDTB113ZS,126
Zouser Part # PDTB113ZS-126
Manufacturer NXP
Category SemiconductorsTransistorsBipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 500MW TO92-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models PDTB113ZS,126 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock620 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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PDTB113ZS,126 Specifications

Part Number PDTB113ZS,126
Brand NXP
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single, Pre-Biased
Manufacturer NXP USA Inc.
Series -
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

PDTB113ZS,126 Documents

PDTB113ZS, PDTB113ZS Datasheet (Total Pages: 10, Size: 130.06 KB)
PDTB113ZK Datasheet CoverPDTB113ZK Datasheet Page 2PDTB113ZK Datasheet Page 3PDTB113ZK Datasheet Page 4PDTB113ZK Datasheet Page 5PDTB113ZK Datasheet Page 6PDTB113ZK Datasheet Page 7PDTB113ZK Datasheet Page 8PDTB113ZK Datasheet Page 9PDTB113ZK Datasheet Page 10

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