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NTD4806N-1G


Part Number NTD4806N-1G
Zouser Part # NTD4806N-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 11A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NTD4806N-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock457 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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NTD4806N-1G Specifications

Part Number NTD4806N-1G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2142pF @ 12V
FET Feature -
Power Dissipation (Max) 1.4W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak

NTD4806N-1G Documents

NTD4806N-1G, NTD4806N-1G Datasheet (Total Pages: 8, Size: 128.05 KB)
NVD4806NT4G Datasheet CoverNVD4806NT4G Datasheet Page 2NVD4806NT4G Datasheet Page 3NVD4806NT4G Datasheet Page 4NVD4806NT4G Datasheet Page 5NVD4806NT4G Datasheet Page 6NVD4806NT4G Datasheet Page 7NVD4806NT4G Datasheet Page 8

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