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NJVMJD122T4G


Part Number NJVMJD122T4G
Zouser Part # NJVMJD122T4G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 100V 8A DPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NJVMJD122T4G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock369 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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NJVMJD122T4G Specifications

Part Number NJVMJD122T4G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 1.75W
Frequency - Transition 4MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK

NJVMJD122T4G Documents

NJVMJD122T4G, NJVMJD122T4G Datasheet (Total Pages: 8, Size: 100.84 KB)
MJD122T4 Datasheet CoverMJD122T4 Datasheet Page 2MJD122T4 Datasheet Page 3MJD122T4 Datasheet Page 4MJD122T4 Datasheet Page 5MJD122T4 Datasheet Page 6MJD122T4 Datasheet Page 7MJD122T4 Datasheet Page 8

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