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NJVMJD112G


Part Number NJVMJD112G
Zouser Part # NJVMJD112G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 100V 2A DPAK-4
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NJVMJD112G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock319 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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NJVMJD112G Specifications

Part Number NJVMJD112G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK

NJVMJD112G Documents

NJVMJD112G, NJVMJD112G Datasheet (Total Pages: 10, Size: 148.1 KB)
MJD117RLG Datasheet CoverMJD117RLG Datasheet Page 2MJD117RLG Datasheet Page 3MJD117RLG Datasheet Page 4MJD117RLG Datasheet Page 5MJD117RLG Datasheet Page 6MJD117RLG Datasheet Page 7MJD117RLG Datasheet Page 8MJD117RLG Datasheet Page 9MJD117RLG Datasheet Page 10

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