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NGTD21T65F2WP


Part Number NGTD21T65F2WP
Zouser Part # NGTD21T65F2WP
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT TRENCH FIELD STOP 650V DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NGTD21T65F2WP PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock205 - More on Order
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Lead-TimeTo be Confirmed
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NGTD21T65F2WP Specifications

Part Number NGTD21T65F2WP
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer ON Semiconductor
Series -
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 45A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

NGTD21T65F2WP Documents

NGTD21T65F2WP, NGTD21T65F2WP Datasheet (Total Pages: 3, Size: 84.25 KB)
NGTD21T65F2WP Datasheet CoverNGTD21T65F2WP Datasheet Page 2NGTD21T65F2WP Datasheet Page 3

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