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MUN5311DW1T2G


Part Number MUN5311DW1T2G
Zouser Part # MUN5311DW1T2G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Arrays, Pre-Biased
Description TRANS PREBIAS NPN/PNP SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MUN5311DW1T2G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock17,079 - More on Order
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Lead-TimeTo be Confirmed
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MUN5311DW1T2G Specifications

Part Number MUN5311DW1T2G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Series -
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

MUN5311DW1T2G Documents

MUN5311DW1T2G, MUN5311DW1T2G Datasheet (Total Pages: 13, Size: 250.35 KB)
NSVBC114EPDXV6T1G Datasheet CoverNSVBC114EPDXV6T1G Datasheet Page 2NSVBC114EPDXV6T1G Datasheet Page 3NSVBC114EPDXV6T1G Datasheet Page 4NSVBC114EPDXV6T1G Datasheet Page 5NSVBC114EPDXV6T1G Datasheet Page 6NSVBC114EPDXV6T1G Datasheet Page 7NSVBC114EPDXV6T1G Datasheet Page 8NSVBC114EPDXV6T1G Datasheet Page 9NSVBC114EPDXV6T1G Datasheet Page 10NSVBC114EPDXV6T1G Datasheet Page 11NSVBC114EPDXV6T1G Datasheet Page 12NSVBC114EPDXV6T1G Datasheet Page 13

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