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MJD112-1G
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MJD112-1G


Part Number MJD112-1G
Zouser Part # MJD112-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 100V 2A IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MJD112-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock5,284 - More on Order
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MJD112-1G Specifications

Part Number MJD112-1G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK

MJD112-1G Documents

MJD112-1G, MJD112-1G Datasheet (Total Pages: 10, Size: 148.1 KB)
MJD117RLG Datasheet CoverMJD117RLG Datasheet Page 2MJD117RLG Datasheet Page 3MJD117RLG Datasheet Page 4MJD117RLG Datasheet Page 5MJD117RLG Datasheet Page 6MJD117RLG Datasheet Page 7MJD117RLG Datasheet Page 8MJD117RLG Datasheet Page 9MJD117RLG Datasheet Page 10

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