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MJ11012G
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MJ11012G


Part Number MJ11012G
Zouser Part # MJ11012G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 60V 30A TO-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MJ11012G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock682 - More on Order
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Lead-TimeTo be Confirmed
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MJ11012G Specifications

Part Number MJ11012G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 30A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
Power - Max 200W
Frequency - Transition 4MHz
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3)

MJ11012G Documents

MJ11012G, MJ11012G Datasheet (Total Pages: 4, Size: 115.83 KB)
MJ11016 Datasheet CoverMJ11016 Datasheet Page 2MJ11016 Datasheet Page 3MJ11016 Datasheet Page 4

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