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IXTH1N200P3


Part Number IXTH1N200P3
Zouser Part # IXTH1N200P3
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 2000V 1A TO-247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTH1N200P3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock505 - More on Order
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IXTH1N200P3 Specifications

Part Number IXTH1N200P3
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3

IXTH1N200P3 Documents

IXTH1N200P3, IXTH1N200P3 Datasheet (Total Pages: 5, Size: 262.47 KB)
IXTA1N200P3HV Datasheet CoverIXTA1N200P3HV Datasheet Page 2IXTA1N200P3HV Datasheet Page 3IXTA1N200P3HV Datasheet Page 4IXTA1N200P3HV Datasheet Page 5

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