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IRFB11N50APBF


Part Number IRFB11N50APBF
Zouser Part # IRFB11N50APBF_43
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description PLANAR >= 100V
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IRFB11N50APBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock351 - More on Order
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Lead-TimeCan Ship Immediately
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IRFB11N50APBF Specifications

Part Number IRFB11N50APBF
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB11N50APBF Documents

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