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IRF9Z34NPBF


Part Number IRF9Z34NPBF
Zouser Part # IRF9Z34NPBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 55V 19A TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IRF9Z34NPBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock18,819 - More on Order
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Lead-TimeCan Ship Immediately
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IRF9Z34NPBF Specifications

Part Number IRF9Z34NPBF
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRF9Z34NPBF Documents

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