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IPSH6N03LA G


Part Number IPSH6N03LA G
Zouser Part # IPSH6N03LA-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 50A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPSH6N03LA G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock353 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IPSH6N03LA G Specifications

Part Number IPSH6N03LA G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 15V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPSH6N03LA G Documents

IPSH6N03LA G, IPSH6N03LA G Datasheet (Total Pages: 12, Size: 536.86 KB)
IPUH6N03LA G Datasheet CoverIPUH6N03LA G Datasheet Page 2IPUH6N03LA G Datasheet Page 3IPUH6N03LA G Datasheet Page 4IPUH6N03LA G Datasheet Page 5IPUH6N03LA G Datasheet Page 6IPUH6N03LA G Datasheet Page 7IPUH6N03LA G Datasheet Page 8IPUH6N03LA G Datasheet Page 9IPUH6N03LA G Datasheet Page 10IPUH6N03LA G Datasheet Page 11IPUH6N03LA G Datasheet Page 12

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