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IPP26CNE8N G


Part Number IPP26CNE8N G
Zouser Part # IPP26CNE8N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 85V 35A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP26CNE8N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock256 - More on Order
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Lead-TimeTo be Confirmed
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IPP26CNE8N G Specifications

Part Number IPP26CNE8N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 40V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP26CNE8N G Documents

IPP26CNE8N G, IPP26CNE8N G Datasheet (Total Pages: 13, Size: 612.37 KB)
IPD25CNE8N G Datasheet CoverIPD25CNE8N G Datasheet Page 2IPD25CNE8N G Datasheet Page 3IPD25CNE8N G Datasheet Page 4IPD25CNE8N G Datasheet Page 5IPD25CNE8N G Datasheet Page 6IPD25CNE8N G Datasheet Page 7IPD25CNE8N G Datasheet Page 8IPD25CNE8N G Datasheet Page 9IPD25CNE8N G Datasheet Page 10IPD25CNE8N G Datasheet Page 11IPD25CNE8N G Datasheet Page 12IPD25CNE8N G Datasheet Page 13

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