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IPP10N03LB G


Part Number IPP10N03LB G
Zouser Part # IPP10N03LB-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP10N03LB G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock458 - More on Order
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Lead-TimeTo be Confirmed
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IPP10N03LB G Specifications

Part Number IPP10N03LB G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639pF @ 15V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3

IPP10N03LB G Documents

IPP10N03LB G, IPP10N03LB G Datasheet (Total Pages: 9, Size: 270.17 KB)
IPP10N03LB G Datasheet CoverIPP10N03LB G Datasheet Page 2IPP10N03LB G Datasheet Page 3IPP10N03LB G Datasheet Page 4IPP10N03LB G Datasheet Page 5IPP10N03LB G Datasheet Page 6IPP10N03LB G Datasheet Page 7IPP10N03LB G Datasheet Page 8IPP10N03LB G Datasheet Page 9

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