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IPP096N03L G
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IPP096N03L G


Part Number IPP096N03L G
Zouser Part # IPP096N03L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 35A TO-220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP096N03L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock606 - More on Order
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Lead-TimeCan Ship Immediately
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IPP096N03L G Specifications

Part Number IPP096N03L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP096N03L G Documents

IPP096N03L G, IPP096N03L G Datasheet (Total Pages: 10, Size: 294.15 KB)
IPB096N03LGATMA1 Datasheet CoverIPB096N03LGATMA1 Datasheet Page 2IPB096N03LGATMA1 Datasheet Page 3IPB096N03LGATMA1 Datasheet Page 4IPB096N03LGATMA1 Datasheet Page 5IPB096N03LGATMA1 Datasheet Page 6IPB096N03LGATMA1 Datasheet Page 7IPB096N03LGATMA1 Datasheet Page 8IPB096N03LGATMA1 Datasheet Page 9IPB096N03LGATMA1 Datasheet Page 10

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