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IPP048N06L G


Part Number IPP048N06L G
Zouser Part # IPP048N06L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 100A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP048N06L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock162 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IPP048N06L G Specifications

Part Number IPP048N06L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 30V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3

IPP048N06L G Documents

IPP048N06L G, IPP048N06L G Datasheet (Total Pages: 10, Size: 375.16 KB)
IPB048N06LGATMA1 Datasheet CoverIPB048N06LGATMA1 Datasheet Page 2IPB048N06LGATMA1 Datasheet Page 3IPB048N06LGATMA1 Datasheet Page 4IPB048N06LGATMA1 Datasheet Page 5IPB048N06LGATMA1 Datasheet Page 6IPB048N06LGATMA1 Datasheet Page 7IPB048N06LGATMA1 Datasheet Page 8IPB048N06LGATMA1 Datasheet Page 9IPB048N06LGATMA1 Datasheet Page 10

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