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IPI147N12N3GAKSA1


Part Number IPI147N12N3GAKSA1
Zouser Part # IPI147N12N3GAKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 120V 56A TO262-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPI147N12N3GAKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPI147N12N3GAKSA1 Specifications

Part Number IPI147N12N3GAKSA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI147N12N3GAKSA1 Documents

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