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IPI034NE7N3 G


Part Number IPI034NE7N3 G
Zouser Part # IPI034NE7N3-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 75V 100A TO262-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI034NE7N3 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPI034NE7N3 G Specifications

Part Number IPI034NE7N3 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI034NE7N3 G Documents

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