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IPD65R660CFDBTMA1


Part Number IPD65R660CFDBTMA1
Zouser Part # IPD65R660CFDBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 6A TO252
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models IPD65R660CFDBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPD65R660CFDBTMA1 Specifications

Part Number IPD65R660CFDBTMA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R660CFDBTMA1 Documents

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