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IPD60R360P7ATMA1


Part Number IPD60R360P7ATMA1
Zouser Part # IPD60R360P7ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 9A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD60R360P7ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock237 - More on Order
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IPD60R360P7ATMA1 Specifications

Part Number IPD60R360P7ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ P7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R360P7ATMA1 Documents

IPD60R360P7ATMA1, IPD60R360P7ATMA1 Datasheet (Total Pages: 14, Size: 1,099.06 KB)
IPD60R360P7ATMA1 Datasheet CoverIPD60R360P7ATMA1 Datasheet Page 2IPD60R360P7ATMA1 Datasheet Page 3IPD60R360P7ATMA1 Datasheet Page 4IPD60R360P7ATMA1 Datasheet Page 5IPD60R360P7ATMA1 Datasheet Page 6IPD60R360P7ATMA1 Datasheet Page 7IPD60R360P7ATMA1 Datasheet Page 8IPD60R360P7ATMA1 Datasheet Page 9IPD60R360P7ATMA1 Datasheet Page 10IPD60R360P7ATMA1 Datasheet Page 11IPD60R360P7ATMA1 Datasheet Page 12IPD60R360P7ATMA1 Datasheet Page 13IPD60R360P7ATMA1 Datasheet Page 14

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