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IPD35N10S3L26ATMA1


Part Number IPD35N10S3L26ATMA1
Zouser Part # IPD35N10S3L26ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD35N10S3L26ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock3,857 - More on Order
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IPD35N10S3L26ATMA1 Specifications

Part Number IPD35N10S3L26ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD35N10S3L26ATMA1 Documents

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