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IPD082N10N3GATMA1 |
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| Part Number | IPD082N10N3GATMA1 |
| Zouser Part # | IPD082N10N3GATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 80A TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD082N10N3GATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 24 - May 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 3,464 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPD082N10N3GATMA1 Specifications
| Part Number | IPD082N10N3GATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 73A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD082N10N3GATMA1 Documents
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