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IPD04N03LA G


Part Number IPD04N03LA G
Zouser Part # IPD04N03LA-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 50A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD04N03LA G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock491 - More on Order
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Lead-TimeCan Ship Immediately
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IPD04N03LA G Specifications

Part Number IPD04N03LA G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5199pF @ 15V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD04N03LA G Documents

IPD04N03LA G, IPD04N03LA G Datasheet (Total Pages: 12, Size: 529.28 KB)
IPU04N03LA G Datasheet CoverIPU04N03LA G Datasheet Page 2IPU04N03LA G Datasheet Page 3IPU04N03LA G Datasheet Page 4IPU04N03LA G Datasheet Page 5IPU04N03LA G Datasheet Page 6IPU04N03LA G Datasheet Page 7IPU04N03LA G Datasheet Page 8IPU04N03LA G Datasheet Page 9IPU04N03LA G Datasheet Page 10IPU04N03LA G Datasheet Page 11IPU04N03LA G Datasheet Page 12

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