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IPB80N06S2L09ATMA1


Part Number IPB80N06S2L09ATMA1
Zouser Part # IPB80N06S2L09ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 80A TO263-3
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models IPB80N06S2L09ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock459 - More on Order
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Lead-TimeTo be Confirmed
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IPB80N06S2L09ATMA1 Specifications

Part Number IPB80N06S2L09ATMA1
Brand Infineon Technologies
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 25V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB80N06S2L09ATMA1 Documents

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