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IPB180N10S402ATMA1


Part Number IPB180N10S402ATMA1
Zouser Part # IPB180N10S402ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH TO263-7
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB180N10S402ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPB180N10S402ATMA1 Specifications

Part Number IPB180N10S402ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14600pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)

IPB180N10S402ATMA1 Documents

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