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IPB136N08N3 G


Part Number IPB136N08N3 G
Zouser Part # IPB136N08N3-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 45A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB136N08N3 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock476 - More on Order
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Lead-TimeCan Ship Immediately
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IPB136N08N3 G Specifications

Part Number IPB136N08N3 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 13.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 40V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB136N08N3 G Documents

IPB136N08N3 G, IPB136N08N3 G Datasheet (Total Pages: 11, Size: 1,019.89 KB)
IPB136N08N3 G Datasheet CoverIPB136N08N3 G Datasheet Page 2IPB136N08N3 G Datasheet Page 3IPB136N08N3 G Datasheet Page 4IPB136N08N3 G Datasheet Page 5IPB136N08N3 G Datasheet Page 6IPB136N08N3 G Datasheet Page 7IPB136N08N3 G Datasheet Page 8IPB136N08N3 G Datasheet Page 9IPB136N08N3 G Datasheet Page 10IPB136N08N3 G Datasheet Page 11

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