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IPB120N06N G


Part Number IPB120N06N G
Zouser Part # IPB120N06N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 75A TO-263
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB120N06N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock534 - More on Order
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Lead-TimeCan Ship Immediately
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IPB120N06N G Specifications

Part Number IPB120N06N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 94µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 30V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB120N06N G Documents

IPB120N06N G, IPB120N06N G Datasheet (Total Pages: 10, Size: 737.46 KB)
IPB120N06N G Datasheet CoverIPB120N06N G Datasheet Page 2IPB120N06N G Datasheet Page 3IPB120N06N G Datasheet Page 4IPB120N06N G Datasheet Page 5IPB120N06N G Datasheet Page 6IPB120N06N G Datasheet Page 7IPB120N06N G Datasheet Page 8IPB120N06N G Datasheet Page 9IPB120N06N G Datasheet Page 10

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