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IPA65R600C6XKSA1


Part Number IPA65R600C6XKSA1
Zouser Part # IPA65R600C6XKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 7.3A TO220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPA65R600C6XKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock328 - More on Order
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Lead-TimeTo be Confirmed
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IPA65R600C6XKSA1 Specifications

Part Number IPA65R600C6XKSA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack

IPA65R600C6XKSA1 Documents

IPA65R600C6XKSA1, IPA65R600C6XKSA1 Datasheet (Total Pages: 19, Size: 2,092.73 KB)
IPB65R600C6ATMA1 Datasheet CoverIPB65R600C6ATMA1 Datasheet Page 2IPB65R600C6ATMA1 Datasheet Page 3IPB65R600C6ATMA1 Datasheet Page 4IPB65R600C6ATMA1 Datasheet Page 5IPB65R600C6ATMA1 Datasheet Page 6IPB65R600C6ATMA1 Datasheet Page 7IPB65R600C6ATMA1 Datasheet Page 8IPB65R600C6ATMA1 Datasheet Page 9IPB65R600C6ATMA1 Datasheet Page 10IPB65R600C6ATMA1 Datasheet Page 11IPB65R600C6ATMA1 Datasheet Page 12IPB65R600C6ATMA1 Datasheet Page 13IPB65R600C6ATMA1 Datasheet Page 14

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