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IGB03N120H2ATMA1


Part Number IGB03N120H2ATMA1
Zouser Part # IGB03N120H2ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT 1200V 9.6A 62.5W TO263-3
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models IGB03N120H2ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock423 - More on Order
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Lead-TimeTo be Confirmed
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IGB03N120H2ATMA1 Specifications

Part Number IGB03N120H2ATMA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer Infineon Technologies
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 9.6A
Current - Collector Pulsed (Icm) 9.9A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3

IGB03N120H2ATMA1 Documents

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