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HN3C10FUTE85LF


Part Number HN3C10FUTE85LF
Zouser Part # HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - RF
Description RF TRANS 2 NPN 12V 7GHZ US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN3C10FUTE85LF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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HN3C10FUTE85LF Specifications

Part Number HN3C10FUTE85LF
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - RF
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

HN3C10FUTE85LF Documents

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