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HGTP10N120BN
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HGTP10N120BN


Part Number HGTP10N120BN
Zouser Part # HGTP10N120BN
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT 1200V 35A 298W TO220AB
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models HGTP10N120BN PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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HGTP10N120BN Specifications

Part Number HGTP10N120BN
Brand ON Semiconductor
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer ON Semiconductor
Series -
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

HGTP10N120BN Documents

HGTP10N120BN, HGTP10N120BN Datasheet (Total Pages: 10, Size: 296.05 KB)
HGT1S10N120BNS Datasheet CoverHGT1S10N120BNS Datasheet Page 2HGT1S10N120BNS Datasheet Page 3HGT1S10N120BNS Datasheet Page 4HGT1S10N120BNS Datasheet Page 5HGT1S10N120BNS Datasheet Page 6HGT1S10N120BNS Datasheet Page 7HGT1S10N120BNS Datasheet Page 8HGT1S10N120BNS Datasheet Page 9HGT1S10N120BNS Datasheet Page 10

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