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GT10J312(Q)
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GT10J312(Q)


Part Number GT10J312(Q)
Zouser Part # GT10J312-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT 600V 10A 60W TO220SM
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GT10J312(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock486 - More on Order
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GT10J312(Q) Specifications

Part Number GT10J312(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Current - Collector Pulsed (Icm) 20A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr) 200ns
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM

GT10J312(Q) Documents

GT10J312(Q), GT10J312(Q) Datasheet (Total Pages: 7, Size: 509.49 KB)
GT10J312(Q) Datasheet CoverGT10J312(Q) Datasheet Page 2GT10J312(Q) Datasheet Page 3GT10J312(Q) Datasheet Page 4GT10J312(Q) Datasheet Page 5GT10J312(Q) Datasheet Page 6GT10J312(Q) Datasheet Page 7

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