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GP1M020A060N


Part Number GP1M020A060N
Zouser Part # GP1M020A060N
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 20A TO3PN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M020A060N PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock480 - More on Order
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Lead-TimeTo be Confirmed
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GP1M020A060N Specifications

Part Number GP1M020A060N
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2097pF @ 25V
FET Feature -
Power Dissipation (Max) 347W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3

GP1M020A060N Documents

GP1M020A060N, GP1M020A060N Datasheet (Total Pages: 5, Size: 776.49 KB)
GP1M020A060N Datasheet CoverGP1M020A060N Datasheet Page 2GP1M020A060N Datasheet Page 3GP1M020A060N Datasheet Page 4GP1M020A060N Datasheet Page 5

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