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GP1M009A050FSH


Part Number GP1M009A050FSH
Zouser Part # GP1M009A050FSH
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 8.5A TO220F
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M009A050FSH PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock442 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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GP1M009A050FSH Specifications

Part Number GP1M009A050FSH
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1195pF @ 25V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

GP1M009A050FSH Documents

GP1M009A050FSH, GP1M009A050FSH Datasheet (Total Pages: 7, Size: 408.13 KB)
GP1M009A050HS Datasheet CoverGP1M009A050HS Datasheet Page 2GP1M009A050HS Datasheet Page 3GP1M009A050HS Datasheet Page 4GP1M009A050HS Datasheet Page 5GP1M009A050HS Datasheet Page 6GP1M009A050HS Datasheet Page 7

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