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GP1M009A020CG


Part Number GP1M009A020CG
Zouser Part # GP1M009A020CG
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 9A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M009A020CG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock234 - More on Order
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Lead-TimeTo be Confirmed
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GP1M009A020CG Specifications

Part Number GP1M009A020CG
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M009A020CG Documents

GP1M009A020CG, GP1M009A020CG Datasheet (Total Pages: 6, Size: 521.66 KB)
GP1M009A020PG Datasheet CoverGP1M009A020PG Datasheet Page 2GP1M009A020PG Datasheet Page 3GP1M009A020PG Datasheet Page 4GP1M009A020PG Datasheet Page 5GP1M009A020PG Datasheet Page 6

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