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For Reference Only
GA10SICP12-263 |
|
| Part Number | GA10SICP12-263 |
| Zouser Part # | GA10SICP12-263 |
| Manufacturer | GeneSiC Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | TRANS SJT 1200V 25A TO263-7 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | GA10SICP12-263 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 547 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
GA10SICP12-263 Specifications
| Part Number | GA10SICP12-263 | |
| Brand | GeneSiC Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1403pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 170W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK (7-Lead) | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
GA10SICP12-263 Documents
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