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ESM2012DV
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ESM2012DV


Part Number ESM2012DV
Zouser Part # ESM2012DV
Manufacturer STMicroelectronics
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 120V 120A ISOTOP
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models ESM2012DV PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock452 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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ESM2012DV Specifications

Part Number ESM2012DV
Brand STMicroelectronics
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer STMicroelectronics
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 120A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 100A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 1200 @ 100A, 5V
Power - Max 175W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case ISOTOP
Supplier Device Package ISOTOP®

ESM2012DV Documents

ESM2012DV, ESM2012DV Datasheet (Total Pages: 8, Size: 399.95 KB)
ESM2012DV Datasheet CoverESM2012DV Datasheet Page 2ESM2012DV Datasheet Page 3ESM2012DV Datasheet Page 4ESM2012DV Datasheet Page 5ESM2012DV Datasheet Page 6ESM2012DV Datasheet Page 7ESM2012DV Datasheet Page 8

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