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EPC2010C


Part Number EPC2010C
Zouser Part # EPC2010C
Manufacturer EPC
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description GANFET TRANS 200V 22A BUMPED DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models EPC2010C PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock13,253 - More on Order
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EPC2010C Specifications

Part Number EPC2010C
Brand EPC
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer EPC
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (7-Solder Bar)
Package / Case Die

EPC2010C Documents

EPC2010C, EPC2010C Datasheet (Total Pages: 6, Size: 1,136.21 KB)
EPC2010C Datasheet CoverEPC2010C Datasheet Page 2EPC2010C Datasheet Page 3EPC2010C Datasheet Page 4EPC2010C Datasheet Page 5EPC2010C Datasheet Page 6

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