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BUZ32 H
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BUZ32 H


Part Number BUZ32 H
Zouser Part # BUZ32-H
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 9.5A TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BUZ32 H PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock695 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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BUZ32 H Specifications

Part Number BUZ32 H
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

BUZ32 H Documents

BUZ32 H, BUZ32 H Datasheet (Total Pages: 10, Size: 402.94 KB)
BUZ32 H Datasheet CoverBUZ32 H Datasheet Page 2BUZ32 H Datasheet Page 3BUZ32 H Datasheet Page 4BUZ32 H Datasheet Page 5BUZ32 H Datasheet Page 6BUZ32 H Datasheet Page 7BUZ32 H Datasheet Page 8BUZ32 H Datasheet Page 9BUZ32 H Datasheet Page 10

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