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BSC039N06NSATMA1


Part Number BSC039N06NSATMA1
Zouser Part # BSC039N06NSATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 19A TDSON-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSC039N06NSATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock384 - More on Order
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BSC039N06NSATMA1 Specifications

Part Number BSC039N06NSATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN

BSC039N06NSATMA1 Documents

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