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APT1001R1BN


Part Number APT1001R1BN
Zouser Part # APT1001R1BN
Manufacturer Microsemi
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 10.5A TO247AD
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models APT1001R1BN PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 7 - Jun 12 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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APT1001R1BN Specifications

Part Number APT1001R1BN
Brand Microsemi
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Microsemi Corporation
Series POWER MOS IV®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3

APT1001R1BN Documents

APT1001R1BN, APT1001R1BN Datasheet (Total Pages: 4, Size: 52.1 KB)
APT1001R1BN Datasheet CoverAPT1001R1BN Datasheet Page 2APT1001R1BN Datasheet Page 3APT1001R1BN Datasheet Page 4

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