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2SD2206A(T6SEP,F,M


Part Number 2SD2206A(T6SEP,F,M
Zouser Part # 2SD2206A-T6SEP-F-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN 2A 120V TO226-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SD2206A(T6SEP,F,M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock432 - More on Order
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Lead-TimeTo be Confirmed
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2SD2206A(T6SEP,F,M Specifications

Part Number 2SD2206A(T6SEP,F,M
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V
Power - Max 900mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD

2SD2206A(T6SEP,F,M Documents

2SD2206A(T6SEP, 2SD2206A(T6SEP Datasheet (Total Pages: 4, Size: 154.16 KB)
2SD2206A(T6SEP Datasheet Cover2SD2206A(T6SEP Datasheet Page 22SD2206A(T6SEP Datasheet Page 32SD2206A(T6SEP Datasheet Page 4

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