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2SD1221-Y(Q)


Part Number 2SD1221-Y(Q)
Zouser Part # 2SD1221-Y-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN 60V 3A PW MOLD
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SD1221-Y(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock517 - More on Order
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Lead-TimeTo be Confirmed
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2SD1221-Y(Q) Specifications

Part Number 2SD1221-Y(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 3MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD

2SD1221-Y(Q) Documents

2SD1221-Y(Q), 2SD1221-Y(Q) Datasheet (Total Pages: 4, Size: 151.73 KB)
2SD1221-Y(Q) Datasheet Cover2SD1221-Y(Q) Datasheet Page 22SD1221-Y(Q) Datasheet Page 32SD1221-Y(Q) Datasheet Page 4

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